Selective SIGESN:B deposition
US11791158B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 17, 2022 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jan 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing a silicon germanium tin boron (SiGeSn:B) film on a substrate are described. The method comprises exposing a substrate to a precursor mixture comprising a boron precursor, a silicon precursor, a germanium precursor, and a tin precursor to form a boron silicon germanium tin (SiGeSn:B) film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.