Patent · US Active

Cyclic self-limiting etch process

US11791167B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Anthony R. Schepis · Averill Park, US
Hoyoung Kang · Guilderland, US

Key dates

Filing date	Dec 14, 2020
Grant date	Oct 17, 2023
Priority date	—
Expiry date	Jun 22, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02238
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of processing a substrate includes forming a channel through a substrate, depositing a layer of polycrystalline silicon on sidewalls of the channel, and oxidizing uncovered surfaces of the polycrystalline silicon with an oxidation agent. The oxidizing agent causes formation of an oxidized layer, the oxidized layer having a uniform thickness on uncovered surfaces of the polycrystalline silicon. The method includes removing the oxidized layer from the channel with a removal agent, and repeating steps of oxidizing uncovered surfaces and removing the oxidized layer until removing a predetermined amount of the layer of polycrystalline silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.