Patent · US Active

Dual step laser processing of an encapsulant of a semiconductor chip package

US11791169B2 · kind B2 · utility

0Cited by

1References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Pei Luan Pok · Melaka City, MY
Roslie Saini bin Bakar · Melaka City, MY
Chau Fatt Chiang · Melaka City, MY
Chee Hong Lee · 流花街道, CN
Swee Kah Lee · Melaka City, MY
Yu Shien Leong · Kampung Sri Tambak, MY
Jan Sing Loh · Melaka City, MY
Yean Seng Ng · Melaka City, MY

Key dates

Filing date	Aug 14, 2020
Grant date	Oct 17, 2023
Priority date	—
Expiry date	Mar 7, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating an electronic device includes providing an encapsulant having an encapsulation material, providing a first laser beam and forming a trench into a main surface of the encapsulant by removing the encapsulation material by means of the first laser beam, forming a mask along a portion above the edge of the trench, and providing a second laser beam and sweeping the second laser beam over a surface area of the main surface of the encapsulant, wherein the surface area covers at least an area spatially confined by the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.