Stacked semiconductor device and method
US11791332B2 · kind B2 · utility
1Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.