Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
US11791392B2 · kind B2 · utility
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Key dates
| Filing date | Jun 8, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a substrate, a source region and a drain region in the substrate, a buffer dielectric layer positioned on the substrate adjacent to the drain region, and a gate electrode laterally positioned between the source region and the drain region. The gate electrode includes a portion that overlaps with the buffer dielectric layer, and the portion of the gate electrode includes notches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.