Patent · US Active

Doped photovoltaic semiconductor layers and methods of making

US11791427B2 · kind B2 · utility

2Cited by
25References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2021
Grant dateOct 17, 2023
Priority date
Expiry dateDec 23, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/543

Abstract

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.