Doped photovoltaic semiconductor layers and methods of making
US11791427B2 · kind B2 · utility
2Cited by
25References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Dec 23, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
Abstract
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.