Patent · US Active

Method of cooling a deposition source, chamber for cooling a deposition source and deposition system

US11795541B2 · kind B2 · utility

0Cited by
2References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2017
Grant dateOct 24, 2023
Priority date
Expiry dateJan 2, 2038

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C14/243
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.