Method of cooling a deposition source, chamber for cooling a deposition source and deposition system
US11795541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2017 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jan 2, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/243
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.