Semiconductor device structure with resistive element
US11798848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jan 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure also includes a first conductive feature and a second conductive feature surrounded by the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element having a first portion over the second dielectric layer and a second portion penetrating through the second dielectric layer to be electrically connected to the first conductive feature. In addition, the semiconductor device structure includes a conductive via penetrating through the second dielectric layer to be electrically connected to the second conductive feature. The second portion of the resistive element is wider than the conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.