Patent · US Active

Semiconductor devices comprising electrical redistribution layer along with ground line and signal line and methods for manufacturing thereof

US11798874B2 · kind B2 · utility

0Cited by

0References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Walter Hartner · Munich, DE
Francesca Arcioni · Munich, DE
Tuncay ERDOEL · Unterhaching, DE
Vincenzo Fiore · Linz, AT
Helmut Kollmann · Linz, AT
Arif Roni · Neubiberg, DE
Emanuele Stavagna · Linz, AT
Christoph Wagner · Remchingen, DE

Key dates

Filing date	Nov 29, 2021
Grant date	Oct 24, 2023
Priority date	—
Expiry date	Feb 4, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3025
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.