4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof

US11798981B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Mario Giuseppe Saggio · Nettuno, IT
• Angelo Magri' · Decima, IT
• Edoardo ZANETTI · Valverde, IT
• Alfio GUARNERA · Trecastagni, IT

Key dates

• Filing date: Jun 14, 2021
• Grant date: Oct 24, 2023
• Expiry date: Jun 14, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current.