Semiconductor memory device and method of manufacturing the same
US11799003B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Oct 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
Abstract
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.