Method for programming a phase change memory
US11800820B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Nov 22, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to where K is a constant.
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