Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant
US11800824B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.
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