Organometallic compound and method
US11802134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2017 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Mar 1, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N═C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as Si…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.