Di-amine compound, and heat-resistant resin and resin composition using the same
US11802181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2017 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Dec 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a novel di-amine compound, a heat-resistant resin using the di-amine compound, and a resin composition using the heat-resistant resin, and a cured film excellent in chemical resistance and film properties even by a thermal treatment at a low temperature of 200° C. or less can be obtained. The novel di-amine compound is represented by the general formula (1). The heat-resistant resin composition of the present invention or the resin composition can be suitably used in a surface protective film and an interlayer dielectric film of a semiconductor device, a dielectric layer or a planarizing layer of an organic electroluminescent element (organic EL), or the like. (In the general formula (1), R1 and R2 each are a divalent aliphatic group, R3 and R4 each are a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group bonded to an aromatic group by —O—, —CO—, —SO2—, —CH2—, —C(CH3)2— or —C(CF3)2— (wherein F is fluorine), a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —CO—, —SO2—, —CH2—, —C(CH3)2— or …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.