Substrate integrated thin film capacitors using amorphous high-k dielectrics

US11804455B1 · kind B1 · utility

Assignee

• Intel Corporation · US

Inventors

• Aleksandar Aleksov · Chandler, US
• Thomas L. Sounart · Chandler, US
• Kristof Darmawikarta · Chandler, US
• Henning Braunisch · Chandler, US
• Prithwish Chatterjee · Tempe, US
• Andrew J. Brown · Brier, US

Key dates

• Filing date: Oct 4, 2022
• Grant date: Oct 31, 2023
• Expiry date: Oct 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19103
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.