Fin-based and bipolar electrostatic discharge devices

US11804481B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Robert J. Gauthier, Jr. · South Burlington, US
• Meng Miao · Williston, US
• Alain Loiseau · Williston, US
• Souvick Mitra · South Burlington, US
• You Li · South Burlington, US
• Wei Liang · South Burlington, US

Key dates

• Filing date: Feb 25, 2021
• Grant date: Oct 31, 2023
• Expiry date: Sep 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/619

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.