Source/drain regions of semiconductor devices and methods of forming the same
US11804487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2022 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Apr 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
Abstract
A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with a top surface of an STI region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.