Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
US11804519B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Apr 26, 2021 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | May 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-Ga2O3 and the second crystal is a single crystal of a crystalline oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.