Patent · US Active

Semiconductor laser and manufacturing method for a semiconductor laser

US11804696B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Sven Gerhard · Alteglofsheim, DE
Christoph Eichler · Donaustauf, DE
Alfred Lell · Maxhütte-Haidhof, DE
Muhammad Ali · Dublin, IE

Key dates

Filing date	Jun 12, 2019
Grant date	Oct 31, 2023
Priority date	—
Expiry date	Dec 11, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/0424
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.