Semiconductor structure including buffer layer
US11810879B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2022 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Mar 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/37001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.