Transistor component having gate electrodes and field electrodes

US11810958B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Felix Buth · Munich, DE
• Margarete Deckers · Hersbruck, DE
• Christian Feuerbaum · Munich, DE
• Uwe Schmalzbauer · Neubiberg, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Aug 12, 2021
• Grant date: Nov 7, 2023
• Expiry date: Jan 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/2527

Abstract

A transistor includes: gate electrodes and field electrodes, wherein in each case one gate electrode and one field electrode are arranged one above another in a vertical direction in a common trench of a semiconductor body; a gate pad to which the gate electrodes are connected; and a source metallization arranged above the semiconductor body. The field electrodes of a first group include at least one contact section. The at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization. The two sections of the gate electrode are separated from one another in a region of the contact section. At least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode.