Semiconductor structure and method of forming thereof
US11810973B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 14, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Oct 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.