P-type doping in GaN LEDs for high speed operation at low current densities
US11810995B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 3, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.