Bottom emitting VCSEL
US11811197B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2020 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL can include: a substrate that passes light therethrough; a phase matching layer over a top mirror stack; a first metal layer over the phase matching layer; and an end metal region over the first metal layer. The phase matching layer and first metal layer have a cooperative thickness to provide reflectivity of at least a predetermined reflectivity threshold for the emission wavelength. A method of making a VCSEL can include: providing a substrate; forming a first mirror stack above the substrate; forming an active region above the first mirror stack; and forming a reflective end above the active region, the reflective end having a phase matching layer and a first metal layer. The phase matching layer and first metal layer have a combined thickness for the reflective end to have a reflectivity of at least a predetermined reflectivity threshold for an emission wavelength of the VCSEL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.