Breakout structure for an integrated circuit device
US11812544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Jan 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Apparatus having at least one breakout structure are provided. In one example, an apparatus includes a dielectric layer, first and second contact pads, and first and second vias. The first and second contact pads are disposed on the dielectric layer. The first via is disposed through the dielectric layer and coupled to the first contact pad. The first via is offset from the first contact pad in a first direction. The second contact pad is immediately adjacent the first via. The second via is disposed through the dielectric layer immediately adjacent the first contact pad and coupled to the second contact pad. The second via is offset from the second contact pad in a second direction that is opposite of the first direction. The first and the second contact pads define a first differential pair of contact pads that is configured to transmit a first differential pair of signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.