Semiconductor device including magnetic tunnel junction structure
US11812667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Apr 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first magnetic tunnel junction (MTJ) structure, a second MTJ structure, and an interconnection structure. The first MTJ structure, the second MTJ structure, and the interconnection structure are disposed on the substrate. The interconnection structure is located between the first MTJ structure and the second MTJ structure in a first horizontal direction, and the interconnection structure includes a first metal interconnection and a second metal interconnection. The second metal interconnection is disposed on and contacts the first metal interconnection. A material composition of the second metal interconnection is different from a material composition of the first metal interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.