EUV mask blank and method of making EUV mask blank
US11815804B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Inventors
Key dates
| Filing date | Sep 22, 2021 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | May 21, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.