High-silicon-content wet-removable planarizing layer
US11817317B2 · kind B2 · utility
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Key dates
| Filing date | Oct 26, 2020 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Feb 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.