Patent · US Active

Plasma processing apparatus and plasma processing method

US11817321B2 · kind B2 · utility

0Cited by
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18Claims
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Assignee

Inventors

Key dates

Filing dateOct 14, 2021
Grant dateNov 14, 2023
Priority date
Expiry dateJan 15, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/3341
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus includes a plurality of plasma processing chambers, a process gas supply line that supplies a plasma processing gas to the plasma processing chambers, a first additive gas supply line that supplies an additive gas to the plasma processing chambers, an exhaust space shared by the plurality of plasma processing chambers, and a controller. The controller determines a first plasma processing chamber group and a second plasma processing chamber group. The first plasma processing chamber group includes one or more plasma processing chambers, each of which performs the plasma processing and the second plasma processing chamber group includes one or more plasma processing chambers, each of which does not perform the plasma processing. The controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.