Patent · US Active

Passivation structure with planar top surfaces

US11817361B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 19, 2021
Grant dateNov 14, 2023
Priority date
Expiry dateMay 31, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06565
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.