Memory device and fabrication method thereof

US11818891B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Kai Han · Zhubeikou, TW
• Yali Guo · Beijing, CN
• Zhipeng Wu · 红钢城街道, CN
• Lu Zhang · Shanghai, CN
• Hang Yin · Beijing, CN
• Simin Liu · 红钢城街道, CN
• Bo Xu · Beijing, CN

Key dates

• Filing date: Jun 9, 2022
• Grant date: Nov 14, 2023
• Expiry date: Jun 9, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

A memory device includes a staircase region and an array region, along a first lateral direction; a wall structure in the staircase region; and a first separation structure in the array region and arranged along the first lateral direction with the wall structure. The wall structure includes dielectric pairs of a first dielectric layer and a second dielectric layer stacked in the staircase region. The first separation structure is vertically through a stack structure in the array region. The stack structure includes pairs of the first dielectric layer and an electrode layer.