Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same
US11818899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2021 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Apr 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.