Nanofluidic device with silicon nitride membrane
US11819847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2020 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Oct 24, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01L2300/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.