Semiconductor process chamber including lower volume upper dome
US11821106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2018 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | May 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.