Method of manufacturing a semiconductor device
US11822237B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Feb 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.