Sensor and method of forming the same
US11823889B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 11, 2022 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | May 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
A sensor may be provided, including a substrate having a first semiconductor layer, a second semiconductor layer, and a buried insulator layer arranged between the first semiconductor layer and the second semiconductor layer. The sensor may further include a photodiode arranged in the first semiconductor layer; and a quenching resistive element electrically connected in series with the photodiode. The quenching resistive element is arranged in the second semiconductor layer, and the quenching resistive element is arranged over the photodiode but separated from the photodiode by the buried insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.