Methods and devices for graphene formation on flexible substrates by plasma-enhanced chemical vapor deposition
US11823895B2 · kind B2 · utility
0Cited by
1References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 13, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.