Selective processing with etch residue-based inhibitors
US11823909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2019 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Mar 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.