Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
US11823946B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 13, 2020 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Dec 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.