Transistor device having a field plate in an elongate active trench

US11824114B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Tegen · Dresden, DE
• Matthias Kroenke · Dresden, DE

Key dates

• Filing date: Nov 11, 2022
• Grant date: Nov 21, 2023
• Expiry date: Nov 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A transistor device includes a semiconductor substrate having a first major surface, a cell field and an edge termination region laterally surrounding the cell field. The cell field includes: elongate active trenches that extend from the first major surface into the semiconductor substrate, a field plate and a gate electrode being positioned in each elongate active trench, the gate electrode being arranged above and electrically insulated from the field plate; and elongate mesas, each elongate mesa being formed between neighbouring elongate active trenches, the elongate mesas comprising a drift region, a body region on the drift region and a source region on the body region.