Preparation method of bipolar gating memristor and bipolar gating memristor

US11825756B2 · kind B2 · utility

Assignee

• Huazhong University of Science and Technology · CN

Inventors

• Yi Li · Hsinchu, TW
• Yuhui HE · Hubei, CN
• Yaoyao Fu · Hubei, CN
• Xiaodi Huang · Houghton, US
• Xiangshui Miao · Hubei, CN

Key dates

• Filing date: Aug 30, 2021
• Grant date: Nov 21, 2023
• Expiry date: Sep 28, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The present invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method includes: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer by using a magnetron sputtering manner to deposit the upper electrode, controlling upper electrode metal particles to have suitable kinetic energy by controlling sputtering power, controlling a vacuum degree of a region where the upper electrode and the resistive material layer are located, such that a redox reaction occurs spontaneously between the upper electrode and the resistive material layer during the deposition of the upper electrode to form a built-in bipolar gating layer; and continuously depositing the upper electrode on the built-in bipolar gating layer.