Yi Li
18Patents
3h-index
24Co-inventors
56Inventor score
Filing activity: Feb 7, 2007 → Aug 30, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9640259B2 | Single-poly nonvolatile memory cell | Physics | 53 | Active |
| US7517737B2 | Structures for and method of silicide formation on memory array and peripheral logic devices | Electricity | 4 | Active |
| US9236453B2 | Nonvolatile memory structure and fabrication method thereof | Physics | 3 | Active |
| US9473137B2 | Non-volatile boolean logic operation circuit and operation method thereof | Electricity | 3 | Active |
| US10020054B2 | Memristor-based processor integrating computing and memory and method for using the processor | Physics | 1 | Active |
| US9369130B2 | Nonvolatile logic gate circuit based on phase change memory | Electricity | 1 | Active |
| US9543955B2 | Non-volatile logic device based on phase-change magnetic materials and logic operation method thereof | Electricity | 1 | Active |
| US11861489B2 | Convolutional neural network on-chip learning system based on non-volatile memory | Physics | 1 | Active |
| US11171650B2 | Reversible logic circuit and operation method thereof | Electricity | 0 | Active |
| US11200949B2 | Multiplier and operation method based on 1T1R memory | Physics | 0 | Active |
| US10283511B2 | Non-volatile memory | Electricity | 0 | Active |
| US11531880B2 | Memory-based convolutional neural network system | Physics | 0 | Active |
| US11416744B2 | Max pooling processor based on 1T1R memory | Physics | 0 | Active |
| US9418733B2 | Joint short-time and long-time storage device and storage method thereof | Physics | 0 | Active |
| US11475949B2 | Computing array based on 1T1R device, operation circuits and operating methods thereof | Physics | 0 | Active |
| US9564218B2 | Associative memory circuit | Physics | 0 | Active |
| US11825756B2 | Preparation method of bipolar gating memristor and bipolar gating memristor | Electricity | 0 | Active |
| US8076708B2 | Structures for and method of silicide formation on memory array and peripheral logic devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.