Photoplasma etching apparatus having improved plasma-resistant and manufacturing method therefor using a thermal diffusion phenomenon of a rare-earth metal thin film
US11827975B2 · kind B2 · utility
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3References
6Claims
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Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Mar 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a photoplasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.