Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask
US11829065B2 · kind B2 · utility
1Cited by
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21Claims
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Key dates
| Filing date | Mar 31, 2023 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Mar 31, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625MP1+MP2≤1000.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.