Patent · US Active

Error evaluation for a memory system

US11829243B2 · kind B2 · utility

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25Claims
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Assignee

Inventors

Key dates

Filing dateJan 10, 2022
Grant dateNov 28, 2023
Priority date
Expiry dateMar 13, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2201/81
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Methods, systems, and devices for error evaluation for a memory system are described. A memory device may be configured to monitor access errors of the memory device to evaluate a likelihood that such errors are related to a failure of the memory device itself or to a failure outside the memory device. For example, a memory device may monitor a respective quantity of errors for each of a set of banks and, if the memory device detects that multiple banks are associated with a threshold quantity of access errors, the memory device may infer the presence of a failure outside the memory device. The memory device may store an indication of such a detection, which may be used to support failure diagnosis or resolution efforts, such as refraining from replacing a memory device when access errors are more likely to be the result of a system failure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.