Cobalt sputtering target
US11830711B2 · kind B2 · utility
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3Claims
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Assignee
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Key dates
| Filing date | Sep 25, 2015 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jul 31, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.