Patent · US Active

Chip with chip pad and associated solder flux outgassing trench

US11830835B2 · kind B2 · utility

0Cited by

3References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Stadler · Munich, DE
Paul Armand Asentista Calo · Melaka City, MY

Key dates

Filing date	Aug 17, 2021
Grant date	Nov 28, 2023
Priority date	—
Expiry date	Dec 16, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor chip includes a chip pad arranged at a surface of the semiconductor chip. A dielectric layer is arranged at the surface of the semiconductor chip. The dielectric layer has an opening within which a contact portion of the chip pad is exposed, the opening having at least one straight side. The dielectric layer includes a solder flux outgassing trench arranged separate from and in the vicinity of the at least one straight side of the opening and that extends laterally beyond sides of the opening adjoining the straight side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.