Image sensor with a high absorption layer
US11830892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2020 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Dec 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.