Semiconductor device and fabrication method thereof
US11830913B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jul 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a doped group III-V semiconductor layer and a gate layer. The first nitride semiconductor layer has a first surface. The second nitride semiconductor layer is formed on the first surface of the first nitride semiconductor layer and has a greater bandgap than that of the first nitride semiconductor layer. The doped group III-V semiconductor layer is over the second nitride semiconductor layer. The doped group III-V semiconductor layer includes a first portion and a second portion having different thicknesses. The gate layer is disposed on the first portion and the second portion of the doped group III-V semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.